发明名称 |
Process for forming an integrated circuit |
摘要 |
A process for selectively plasma etching polycrystalline silicon or polysilicon in preference to silicon dioxide which minimizes the detrimental effect of carbon. It has been discovered that carbon from the plasma etch chemicals or from photoresist present interferes disadvantageously with the selective plasma etch of polysilicon as opposed to silicon dioxide. By heat treating and deep ultraviolet light treating the photoresist prior to the plasma etch step and by using non-carbon etch chemicals, this detrimental carbon effect can be reduced.
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申请公布号 |
US6087267(A) |
申请公布日期 |
2000.07.11 |
申请号 |
US19860836048 |
申请日期 |
1986.03.04 |
申请人 |
MOTOROLA, INC. |
发明人 |
DOCKREY, JASPER W.;THOMAS, PATRICK K.;HARTMAN, DENNIS C. |
分类号 |
H01L21/3213;(IPC1-7):B44C1/22;C03C15/00 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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