| 摘要 |
In one embodiment, the present invention relates to a method of etching tantalum disposed over a dielectric layer, involving etching at least a portion of the tantalum using a tantalum etch gas mixture containing from about 300 sccm to about 400 sccm of CF4 and about 200 sccm to about 600 sccm of oxygen at a temperature from about 100 DEG C. to about 150 DEG C. under a pressure from about 1 torr to about 1.5 torr. In another embodiment, the present invention relates to a method of etching at least a portion of a tantalum barrier layer, the tantalum barrier layer at least partially surrounding a copper or copper alloy interconnect, involving etching at least a portion of the tantalum barrier layer using a tantalum etch gas mixture containing from about 300 sccm to about 400 sccm of CF4 and about 200 sccm to about 600 sccm of oxygen.
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