Method of fabricating two dissimilar devices with diminished processing steps

摘要

A method for fabricating dissimilar devices in an integrated circuit. In one embodiment, the method can be used to fabricate flash memory, including MOS transistors and flash cells. The method can be used to substantially cofabricate the MOS transistors and flash cells, particularly their gates. The method includes forming layers of adjacent materials for the MOS transistor gates and the flash cell gates, and simultaneously forming the MOS transistor gates and the flash cell gates from the layers of adjacent materials. The method further includes defining drains of the flash cells separate from defining sources of the flash cells.