| 摘要 |
A semiconductor processing method of providing a polysilicon film having induced outer surface roughness includes, a) providing a polysilicon layer over a substrate, the polysilicon layer having an outer surface of a first degree of roughness; b) providing a layer of a refractory metal silicide over the outer surface of the polysilicon layer, the refractory metal silicide preferably being WSix where "x" is initially from 1.0 to 2.5, the WSix layer and the polysilicon layer outer surface defining a first interface therebetween; c) annealing the substrate at a temperature and for a time period which are effective to transform the WSix into a tetragonal crystalline structure and to transform the first interface into a different second interface, the WSix layer not being in a tetragonal crystalline state prior to the anneal, the WSix at the second interface having an increased value of "x" from the initial value of "x"; and d) etching the WSix layer from the polysilicon layer at least to the second interface to leave an outer polysilicon surface having a second degree of roughness, the second degree of roughness being greater than the first degree of roughness. A capacitor having a conductive plate comprising a polysilicon film produced by the process is also disclosed.
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