发明名称 |
Method for growing a silicon single crystal |
摘要 |
A method for melting a silicon starting material can suppress silica (SiO2) from melting out from a quartz crucible wherein the silicon starting material is melted and can provide a high-quality silicon single crystal in a high yield. The growth method comprises melting the silicon starting material charged in the crucible while applying thereto a static magnetic field, contacting a seed crystal to a surface of the silicon melt, and pulling the seed crystal upwardly to solidify the contacted melt. The silicon starting material charged in the crucible, which is under melting, is applied with a static magnetic field such as a Cusp magnetic field, a horizontal magnetic field and/or a vertical magnetic field. The application can control heat convection occurring in the crucible during the course of the melting of the starting material, thereby obtaining a silicon single crystal having a reduced number of dislocation defects.
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申请公布号 |
US6086671(A) |
申请公布日期 |
2000.07.11 |
申请号 |
US19980145417 |
申请日期 |
1998.09.01 |
申请人 |
SUMITOMO SITIX CORPORATION |
发明人 |
KAWANISHI, SOUROKU;YAMAMOTO, YOUICHI |
分类号 |
C30B15/00;C30B15/30;C30B29/06;C30B30/04;H01L21/208;(IPC1-7):C30B15/20 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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