发明名称 Method for manufacturing card type memory device
摘要 A card type memory device comprises a semiconductor chip having a nonvolatile semiconductor memory formed with external connection terminals and a metal frame comprising bed sections and external terminal electrode sections with a step section formed between the bed section and the external terminal electrode section, the bed sections of the metal frame being electrically connected to the external terminal electrode sections of the semiconductor chip. At least one surface and outer peripheral surface of the semiconductor chip are resin sealed such that at least electrode surfaces of the external terminal electrode sections of the metal frame are exposed substantially flush with a resin-sealed body surface. By doing so, a semiconductor package is formed. The semiconductor package is buried in a recess in a card type base board such that the electrode surfaces of the external terminal electrode sections of the metal frame in the semiconductor package is buried substantially flush with an external surface.
申请公布号 US6085412(A) 申请公布日期 2000.07.11
申请号 US19980096372 申请日期 1998.06.12
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IWASAKI, HIROSHI
分类号 B42D15/10;G06K19/077;H01L21/56;H01L23/28;(IPC1-7):H01R43/00 主分类号 B42D15/10
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