发明名称 Target Ion/Ioff threshold tuning circuit and method
摘要 To compensate for process, activity and environmental variations in a semiconductor device, a ratio of a transistor on-current to a transistor off-current within the semiconductor device is detected. The detected ratio is compared with a target ratio to adjust a bias potential of the semiconductor device to bring the detected ratio of the transistor on-current to the transistor off-current to the target ratio.
申请公布号 US6087892(A) 申请公布日期 2000.07.11
申请号 US19980092975 申请日期 1998.06.08
申请人 SUN MICROSYSTEMS, INC. 发明人 BURR, JAMES B.
分类号 G05F3/20;(IPC1-7):G05F1/00 主分类号 G05F3/20
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