| 摘要 |
A semiconductor integrated circuit device includes a bipolar transistor having a semiconductor layer which will have a collector region, a base region provided at the surface of the semiconductor layer, and an emitter region provided at the surface of the base region. The device includes a first silicon film for connecting an external base layer with a base electrode of the transistor, and a first silicide film produced on the surface of the first silicon film, and a second silicon film for connecting an emitter layer with an emitter electrode of the transistor and a second silicide film produced on the surface of the second silicon film.
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