发明名称 |
SRAM cell using two single transistor inverters |
摘要 |
A SRAM cell is disclosed. The SRAM cell comprises: a first inverter having an input and an output; a second inverter having an input and an output, the output of the second inverter capacitively coupled to the input of the first inverter, the input of the second inverter capacitively coupled to the output of the first inverter; a first access transistor controlled by a wordline and connected between the output of the first inverter and a bitline; and a second access transistor controlled by the wordline and connected between the output of the second inverter and a complement to the bitline.
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申请公布号 |
US6088259(A) |
申请公布日期 |
2000.07.11 |
申请号 |
US19990253322 |
申请日期 |
1999.02.19 |
申请人 |
WORLDWIDE SEMICONDUCTOR MANUFACTURING CORPORATION |
发明人 |
CHI, MIN-HWA |
分类号 |
G11C11/412;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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