发明名称 SRAM cell using two single transistor inverters
摘要 A SRAM cell is disclosed. The SRAM cell comprises: a first inverter having an input and an output; a second inverter having an input and an output, the output of the second inverter capacitively coupled to the input of the first inverter, the input of the second inverter capacitively coupled to the output of the first inverter; a first access transistor controlled by a wordline and connected between the output of the first inverter and a bitline; and a second access transistor controlled by the wordline and connected between the output of the second inverter and a complement to the bitline.
申请公布号 US6088259(A) 申请公布日期 2000.07.11
申请号 US19990253322 申请日期 1999.02.19
申请人 WORLDWIDE SEMICONDUCTOR MANUFACTURING CORPORATION 发明人 CHI, MIN-HWA
分类号 G11C11/412;(IPC1-7):G11C11/00 主分类号 G11C11/412
代理机构 代理人
主权项
地址