发明名称 ABRASIVE LIQUID FEED SYSTEM AND FEED METHOD FOR POLISHING SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To prevent change of resistivity by lowering Cu ion concentration contained in a polishing abrasive liquid by interposing an electrode chamber having plural opposite electrode plates for depositing Cu ions in the midway of a feed pipe between a mirror finished surface polishing device and an abrasive liquid tank. SOLUTION: An electrode chamber 27 is disposed in the midway of a feed pipe 24 between a mirror finished surface polishing device 1 and an abrasive liquid tank 2. Two opposite electrode plates 28 are arranged in the electrode chamber 27, and a power supply 29 is connected to the electrode plates 28. Voltage set to a suitable value is applied between two electrode plates 28 to carry current, thereby depositing Cu ions in the polishing abrasive liquid 4 on the electrode plates 28, whereby the polishing abrasive liquid 4 decreased in Cu ion concentration is fed to the mirror finished surface polishing device 1. Thus, the polishing abrasive liquid 4 is circulated to be used, so that the Cu ion concentration in the polishing abrasive liquid 4 will not be heightened.
申请公布号 JP2000190182(A) 申请公布日期 2000.07.11
申请号 JP19980366466 申请日期 1998.12.24
申请人 SUMITOMO METAL IND LTD 发明人 MIYAZAKI MORIMASA
分类号 B24B57/02;B24B1/00;H01L21/304;(IPC1-7):B24B1/00 主分类号 B24B57/02
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