| 摘要 |
A bit line of a semiconductor device capable of obtaining low line resistance and low contact resistance, thereby achieving an improvement in the operating speed and reliability of the semiconductor device. The bit line has a multilayer structure including a Ti film, an MOCVD-TiN film and a W film sequentially formed over the semiconductor substrate. The MOCVD-TiN film serves as a diffusion barrier to suppress a reaction of tungsten, which forms the bit line, with silicon existing on a contact region during a thermal process at a high temperature such as a BPSG reflow.
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