发明名称 |
Method for forming shallow junctions in semiconductor wafers using controlled, low level oxygen ambients during annealing |
摘要 |
A method is provided for forming a shallow junction in a semiconductor wafer that has been implanted with a dopant material. The dopant material is activated by thermal processing of the semiconductor wafer in a thermal processing chamber at a selected temperature for a selected time. The oxygen concentration in the thermal processing chamber during activation of the dopant material is controlled at or near a selected level less than a background level that is typically present when the thermal processing chamber is filled with a process gas. The oxygen concentration may be controlled at or near a selected level in a range less than 1000 parts per million and is preferably controlled at or near a selected level in a range of about 30-300 parts per million. The method is particularly useful for implanted boron or BF2 ions, but may be used for any dopant material.
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申请公布号 |
US6087247(A) |
申请公布日期 |
2000.07.11 |
申请号 |
US19980015640 |
申请日期 |
1998.01.29 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
DOWNEY, DANIEL F. |
分类号 |
H01L21/265;(IPC1-7):H01L21/477 |
主分类号 |
H01L21/265 |
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