发明名称 |
Method to improve commercial bonded SOI material |
摘要 |
A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than 1200 DEG C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.
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申请公布号 |
US6087242(A) |
申请公布日期 |
2000.07.11 |
申请号 |
US19980031289 |
申请日期 |
1998.02.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MARIS, HUMPHREY JOHN;SADANA, DEVENDRA KUMAR |
分类号 |
H01L21/20;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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