发明名称 |
Method to reduce boron diffusion through gate oxide using sidewall spacers |
摘要 |
A gate electrode of a MOS transistor wherein gate oxide 12 is placed over substrate 10. Boron-doped polysilicon gate electrode 14 is placed over gate oxide 12. Optionally, drain extender implants may be added to substrate 10. Low-temperature-deposited nitride layer 18 is placed over gate electrode 14 and gate oxide 12. The structure then undergoes a sidewall spacer etch to form sidewall spacers 20.
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申请公布号 |
US6087268(A) |
申请公布日期 |
2000.07.11 |
申请号 |
US19990237762 |
申请日期 |
1999.01.26 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HOLLOWAY, THOMAS C.;GRIDER, DOUGLAS T. |
分类号 |
H01L21/311;H01L21/318;H01L21/336;H01L29/49;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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