| 摘要 |
In a method for manufacturing a semiconductor device, an insulating layer is formed on a semiconductor substrate, and a refractory metal is formed layer on the insulating layer. Then, a first opening is perforated in the refractory metal layer, and a part of the insulating layer is etched by using the refractory metal as a mask. Then, a second opening is perforated in the refractory metal layer. The second opening is superposed onto the first opening and is larger than the first opening. Then, the insulating layer is again etched by using the refractory metal layer as a mask, so that a T-shaped opening is perforated in the insulating layer. Finally, a modified T-shaped gate metal electrode is formed on the insulating layer having the T-shaped opening.
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