| 摘要 |
PURPOSE: A dry etching apparatus is provided to be capable of quickly obtaining a micro size groove or hole, improving throughput, and increasing anisotropic characteristics and selectivity. CONSTITUTION: A dry etching apparatus is provided with a vacuum process chamber(1), a microwave generator(2) for generating the high frequency of 2.45 GHz, a discharge part(4) for generating gas plasma(5) by using the etching gas passed through a waveguide(3), and a solenoid coil(6) located at the peripheral portion of the discharge part. The discharge part includes a sample pedestal(7), and a wafer(8) loaded on the sample pedestal. The etching gas is exhausted from a gas inlet port(9) through the discharge part and the vacuum process chamber to an exhaust line(10) by using an exhaust pump(11).
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