发明名称 Charged-particle-beam projection-microlithography apparatus and transfer methods
摘要 A charged-particle-beam pattern-transfer apparatus is provided wherein a CPB is emitted from the CPB source, is focused by first and second condenser lenses, and is illuminated onto a mask. A deflector deflects the CPB to a selected subfield of the mask. The CPB transmitted by subfield is projected by a first projection lens toward a back-focal-plane aperture. The portion of the CPB that passes through the back-focal-plane aperture is projected by a second projection lens onto a wafer. Coulomb-effect-induced shifts in focal-point position, and changes in image magnification, projected-image rotation, and astigmatic blur and astigmatic distortions of the image are each corrected by application of electric current to respective components of a correction system, the correction system preferably comprising a set of correction lenses and two stigmators.
申请公布号 US6087669(A) 申请公布日期 2000.07.11
申请号 US19980146061 申请日期 1998.09.02
申请人 NIKON CORPORATION 发明人 SUZUKI, SHOHEI
分类号 G03F7/20;G03F7/207;H01J37/153;H01J37/304;H01J37/317;H01L21/027;(IPC1-7):H01J37/304 主分类号 G03F7/20
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