Capacitor for a dynamic random access memory is produced by applying a conductive support to a structured alternating conductive and sacrificial layer sequence prior to selective sacrificial layer removal

摘要

Capacitor production involves applying a conductive support structure (8') to a structured sequence of alternating conductive layers (61) and sacrificial layers prior to selective sacrificial layer removal. An integrated circuit (IC) capacitor production process comprises: (a) applying a first layer of a first conductive material onto a support; (b) forming a raised structure (5) of the first conductive material or another material on the first layer; (c) producing a layer sequence of alternating first material layers (61) and second material layers, the lowermost layer consisting of material different from that of the raised structure; (d) removing the layer sequence from above the raised structure; (e) structuring the layer sequence and the first layer down to the support to form a layer structure with side walls; (f) covering the layer structure side walls with a support structure (8') of a conductive material, preferably the first material; (g) selectively removing the second material layers; (h) forming a capacitor dielectric (9) on the exposed surfaces of the first material layers (61), the first layer and the support structure (8'); and (i) forming a counter-electrode (10) on the dielectric (9).