| 摘要 |
972,839. Tunnel diodes. STANDARD TELEPHONES & CABLES Ltd. May 19, 1961 [May 25, 1960], No. 18464/61. Heading H1K. A tunnel diode is made by forming a low resistivity layer at the surface of a semiconductor body and then forming by alloying a low resistivity region of opposite conductivity type to the layer extending through it to the main body. In an example, a P-type layer 2 (Fig. 2) is formed by alloying indium-gallium alloy to an N-type germanium wafer, etching away excess alloying material and then alloying a tin-arsenic pellet 3 through the layer to form an N-type region forming a tunnel junction with the layer to which a ring ohmic contact 7 is attached. Alternatively, the body is P type, layer 2 is formed as above, and the N-type region by alloying a pellet consisting of 73.1% by weight gold, 24.4% antimony and 2.5% arsenic to the layer. In another method, an N-type germanium body is heated at 800‹ C. for 4 hours in the presence of arsenic or phosphorus to form a low resistivity layer, and the P region extending through it is formed by alloying a pellet of indium containing 0.5% of gallium to the layer. A further alternative is to form the layer by epitaxial deposition from a mixture of germanium and phosphorus chlorides. |
