METHOD FOR GROWING SINGLE CRYSTAL OF SILICON CARBIDE

摘要

In growing a single crystal (3) of silicon carbide by supplying a silicon carbide-forming gas which has been generated by a method such as heating silicon carbide to sublimation to the front surface of a seed crystal (2), an improvement which comprises adjusting the temperature distribution around the single crystal in a manner such that the temperature gradient from the back of the seed crystal (2) to the lid (8) of a crucible is zero or positive, which leads to preventing or inhibiting the sublimation of silicon carbide from the back of the seed crystal (2); and another improvement which comprises adjusting the temperature distribution in a manner such that the temperature of the inner wall of a vessel for crystal growth around the seed crystal is higher than that of the seed crystal (2), which lead to preventing or inhibiting the growth of polycrystalline silicon carbide which may adversely affect the growth of the single crystal (3).