| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for manufacture of a semiconductor single crystal capable of producing a good-quality Be-containing ZnSe mixed crystal-single crystal having decreased dislocations in a relatively short time. SOLUTION: An ampoule 10, which is formed by sealing a raw material member (ZnSe compound) 14 which consists essentially of Te or Se, or the like, and is coated with a coating layer, a Be supply member 15 and a seed crystal 17 into a container 11 consisting of quartz glass, is prepared. The Be supply member 15 is arranged below the raw material member 14. When the entire part of the ampoule 10 is heated to 500 deg.C, the coating layer is melted and the raw material member 14 is covered with a solution 16a. The solution at the bottom end of the raw material member 14 and near the same is heated to 1050 deg.C by an induction heater and the ampoule 10 is moved downward. As a result, Zn, Se and Be are dissolved from the raw material member 14 and the Be supply member 15 into the solution 16a and the BeZnSeTe mixed crystal- single crystal is grown on the seed crystal.
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