| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to form a semiconductor device, which does not impart unrestorable damage to a semiconductor substrate by concentric flow of reverse current into the semiconductor substrate by a local yield and is stable in function and is excellent in reliability. SOLUTION: The semiconductor thin film 2 is formed at a growth temperature, for example, 1020 deg.C, lower than a reference growth temperature at which haze does not arise, under pressure, for example, 200 Torr lower than ordinary temperature (760 Torr). An impurity concentration profile, at which an inclination 22a where the impurity concentration approximately rectilinearly falls with an increase in the distance from the surface 1a of the semiconductor substrate 1 (with a decrease in depth D) crosses a curve 21a of a transition region at the boundary between the semiconductor substrate 1 and the semiconductor thin film 2, is obtained. Namely, the inclined region 22 where the resistance value changes gently in succession to the transition region 21 where the resistance value changes sharply appears in an epitaxial growth layer 2.
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