| 发明名称 |
ETCHING PROCESS FOR PRODUCING SUBSTANTIALLY UNDERCUT FREE SILICON ON INSULATOR STRUCTURES |
| 摘要 |
A method of anisotropically plasma etching a silicon on insulator substrate wherein undercutting is substantially eliminated by utilizing as a finishing etch step a reactive ion etching process wherein the ion density is reduced in order to limit ion charging through different size recesses in order to uniformly etch in a vertical direction.
|
| 申请公布号 |
WO9965065(A9) |
申请公布日期 |
2000.07.06 |
| 申请号 |
WO1999US11809 |
申请日期 |
1999.06.08 |
| 申请人 |
PLASMA-THERM, INC. |
发明人 |
DONOHUE, JOHN, F.;JOHNSON, DAVID, J.;DEVRE, MICHAEL, W. |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/76;H01L21/762;H01L27/12;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/302 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
