METHOD OF MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE

摘要

A seed crystal processed by the electrolytic in-process dressing polishing is used to grow single-crystal silicon carbide by transporting gas for silicon carbide formation onto a silicon carbide seed crystal substrate (11). Since the seed crystal includes very little damage or strain, the resulting single-crystal silicon carbide has very few defects such as micro pipes, thus reducing and the manufacturing cost of a semiconductor device.