THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor and a method for fabricating the thin film transistor are provided to prevent the optical current from generating at a junction portion by blocking the junction portion. CONSTITUTION: A thin film transistor comprises a heat conductive layer(32a) formed on a semiconductor substrate(300). A damping layer(34) covers the heat conductive layer(32a). A source area(34S), a drain area(34D) and an impurity undoped area are formed in an active area(35). The source area(34S) and the drain area(34D) of the active area(35) are overlapped with the heat conductive layer(32a). A gate electrode(38) is formed on the active layer(35). The gate electrode(38) is selectively overlapped with the source area(34s) and the drain area(34d). The heat conductive layer(32a) has a thickness below than 1000 angstrom.