SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a semiconductor device fabricating method are provided to reduce the manufacturing cost of the semiconductor device and improve the productivity by the number of times of the barrier metal layer and tungsten depositing process and the tungsten planarization process. CONSTITUTION: A gate is formed by stacking a first insulating layer and a first conductive layer on an upper portion of a semiconductor substrate(21). A conductive sidewall is formed on one side surface of the gate, and an insulating sidewall is formed on the other surface of the gate. An interlayer insulating layer is formed on the front surface of an upper portion of the structure in which the conductive side wall and the insulating side wall is formed. A contact(30) is inserted into the interlayer insulating layer, and makes contact with the semiconductor substrate(21). An LDD region(27) is formed in the lower semiconductor substrate of the conductive side wall and the insulating sidewall. A source/drain(28) is formed in the semiconductor substrate, and makes contact with the outside of the LDD region(27).