DEVICE FOR GROWING A SINGLE CRYSTAL OF POLY SILICON

摘要

PURPOSE: A device for growing a single crystal of poly silicon which is source of silicon wafers is provided to give the reduction of various defects thereof, the protection of mechanics and the prevention from any modifications. CONSTITUTION: A device is illustrated in figure 1. Many support sticks(13) are placed between an upper support plate(11) and a lower support plate(12) which are inserted by a screw axis(15) and an up and down operating stick(16). A first motor(21) and a moving axis housing(31) are fixed on the plate(11). A timing gear(22) of an axis of the motor(21) and a timing gear(33) of a moving axis(32) are interconnected by a timing belt(23). The axis(32) is connected with the axis(15) and a connecter(34). An other up and down operating stick(17) inserted by the stick(16) is connected and fixed with a support(18) supported by a second motor(25) and a housing(19). The stick(17) is inserted into the axis(15) and is connected with an up and down moving stick(35), and a center portion of a lower support plate(12) is inserted and fixed on the housing(41) inserted by a pulling head(27). A force sensor(47) which can measure the vertical change of the head(17) is attached on a cover(42) of the housing(41). A cooling tank(48) formed inside lower parts of the plate(12) is fixed on a cooling pipe line(49). The head(27) comprises inner ducts(28) and outer ducts(29) which can circulate cooling water. The motor(25) and a connecter(26) are interconnected each other on an upper part of the housing(27). A lower part of the tank(48) fixed on a lower part of the plate(12) is connected and fixed with a heating furnace(61) aimed at melting and growing silicon.