| 摘要 |
PURPOSE: A method for crystallizing a silicon thin film is provided to reduce pollution of metallic catalyst on the silicon thin film, and to attain a simple process. CONSTITUTION: After a buffer layer(20) is formed on a substrate(200), a silicon layer(21) containing crystalline catalyst is formed on the substrate(200). The silicon layer(21) may be formed by sputtering a metal-silicon composite target in which the crystalline catalyst is contained. The silicon layer(21) is then crystallized by a metal induced crystallization(MIC) process and formed into a polycrystalline silicon thin film. Since a ratio of component in the metal-silicon composite target can be regulated, the polycrystalline silicon thin film can be formed from the use of an infinitesimal metal, and therefore the pollution of metallic catalyst on the polycrystalline silicon thin film is reduced. Further, since the polycrystalline silicon thin film is formed from the single silicon layer(21), a manufacturing process is very simplified.
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