发明名称 |
CHARGE COUPLED DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A charge coupled device and a method for fabricating the charge coupled device are provided to effectively reduce a noise by forming a potential profile of a reset gate to an inclined shape. CONSTITUTION: A charge coupled device comprises a reset gate(44) formed on a semiconductor substrate(41). The reset gate(44) is divided into two portions. A high density n type impurity is implanted into one portion of the two portions. A floating diffusion area(42) is formed at one side of the charge coupled device for sensing an image charge which is transmitted from a charge transmitting channel. A reset drain area(43) is formed at the other side of the charge coupled device. The image charge being detected is exhausted through the reset drain area(43).
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申请公布号 |
KR20000040461(A) |
申请公布日期 |
2000.07.05 |
申请号 |
KR19980056114 |
申请日期 |
1998.12.18 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
CHOI, BYUNG HAN;KWON, GYUNG GUK |
分类号 |
H01L27/14;(IPC1-7):H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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