发明名称 CHARGE COUPLED DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A charge coupled device and a method for fabricating the charge coupled device are provided to effectively reduce a noise by forming a potential profile of a reset gate to an inclined shape. CONSTITUTION: A charge coupled device comprises a reset gate(44) formed on a semiconductor substrate(41). The reset gate(44) is divided into two portions. A high density n type impurity is implanted into one portion of the two portions. A floating diffusion area(42) is formed at one side of the charge coupled device for sensing an image charge which is transmitted from a charge transmitting channel. A reset drain area(43) is formed at the other side of the charge coupled device. The image charge being detected is exhausted through the reset drain area(43).
申请公布号 KR20000040461(A) 申请公布日期 2000.07.05
申请号 KR19980056114 申请日期 1998.12.18
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 CHOI, BYUNG HAN;KWON, GYUNG GUK
分类号 H01L27/14;(IPC1-7):H01L27/14 主分类号 H01L27/14
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