METHOD FOR MANUFACTURING OPTICAL SENSOR OF THIN FILM TRANSISTOR

摘要

PURPOSE: A method for fabricating an optical sensor of a thin film transistor is provided to improve the productivity of the thin film transistor by forming the thin film transistor through a dry etching process. CONSTITUTION: A sensor gate(42), a first storage electrode(44), and a switch gate(46) are formed on a semiconductor substrate(40). A first insulating film(48) is formed on the semiconductor substrate(40). A sensor semiconductor layer(50) is formed on the first insulating film(48) formed above the sensor gate(42) and a switch semiconductor layer(52) is formed on the first insulation(48) formed above the switch gate(46). After depositing a conductive metal on the first insulating film(48), the structure is dry etched so that a sensor drain(54a), a sensor source(54b), a second storage electrode(56), a switch drain(58a) and a switch source(58b). A second insulating film(60) is formed on the first insulating film(48). A third insulating film is formed on the second insulating film(60).