发明名称 |
METHOD FOR MANUFACTURING DIELECTRIC FILM AND CELL CAPACITOR MANUFACTURED BY USING THE METHOD |
摘要 |
PURPOSE: A method for manufacturing a dielectric film and a cell capacitor are provided to prevent the dielectric film from the chemical fault by restraining the creation of impurities when an alkyl metal is oxidized. CONSTITUTION: A trimethyl aluminum(200) is supplied as a source for forming an alumina film. An oxidized gas without hydrogen is supplied so as to react with the trimethyl aluminum source(200). The oxidized gas includes O3(210). The oxidized gas includes an activated oxygen radical. The alkyl metal is supplied as a source for forming a dielectric film. The dielectric film is one selected from a group consisting of Al2O3, TiO2, ZrO2, HfO2, Ta2O5, Nb2O5, CeO2, Y2O3, SiO2, N2O3.
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申请公布号 |
KR20000039578(A) |
申请公布日期 |
2000.07.05 |
申请号 |
KR19980054955 |
申请日期 |
1998.12.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM, JAE SUN;KIM, YOUNG GWAN;CHOI, SEONG JE;LEE, SANG IN |
分类号 |
H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
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