| 摘要 |
<p>A method for reading a memory, particularly a non-volatile memory, whose particularity is that it comprises the steps of: generating a memory enable signal (CE); generating a signal (ALE) for the visibility, inside the memory, of address signals generated externally with respect to the memory, the address signals being adapted to allow access to corresponding memory locations of the memory; generating a signal (RD) for the synchronous advancement of the read operation within the memory; each change of state of the memory enable signal (CE), together with a change of state of the address signals, being matched by different cycles for reading the memory, the different read cycles being enabled according to the state of the signal (ALE) for the visibility, inside the memory, of address signals generated externally to the memory, the logic state of the visibility signal switching between the high logic state, the low logic state and the pulsed state; emission of the data read from the memory being correlated to the state transition of the signal (RD) for the synchronous advancement of the reading of the memory. <IMAGE></p> |
