Process for manufacturing a resistive structure used in semiconductor integrated circuit

摘要

Process for manufacturing a resistive structure (1) comprising at least one semiconductor strip (2) laid above a semiconductor substrate (3) characterised in that it comprises the following steps of: covering with a mask (4) said semiconductor strip (2); forming a plurality of apertures (5) in said mask (4) until portions (6) of the semiconductor strip (2) are uncovered; implanting dopant in said semiconductor strip (2) through said apertures (5); subjecting the resistive structure (1) to a thermal process for diffusing the dopant in such a way to obtain a variable concentration profile in the semiconductor strip (2). <IMAGE>