| 摘要 |
PURPOSE: A sensor thin film transistor is provided to improve an operating characteristic of an image device by making double conductive channels in a semiconductor layer. CONSTITUTION: A sensor thin film transistor comprises a black matrix(213) formed on a substrate(211), an insulating layer(215) formed on the black matrix, a semiconductor layer(217) formed on the insulating layer in island form, ohmic contact layers(219a, 219b) formed on the semiconductor layer spaced apart each other, a source and a drain electrode(221a, 221b) formed on the ohmic contact layers which overlaps parallel with the electrodes(221a, 221b), a protecting layer(223) on the semiconductor layer, and a gate electrode(225 formed on the protecting layer and inducing carriers on the surface of the semiconductor layer. An image device comprises a sensing part, a charging part charging the photo current of the sensing part and a switching part transmitting charge of the charging part outside. The sensing part comprises a black matrix(213), a source electrode(221a), a drain electrode(221b), a semiconductor layer(217), a protecting layer(223) and a gate electrode(225).
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