METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A borderless contact formation method is provided to minimize a loss of field oxide and reduce a leakage current by forming a dummy gate at interface between an active and a field regions. CONSTITUTION: After forming a trench for defining an active region and a field region of a semiconductor substrate(30), a field oxide(31) is filled into the trench. By depositing a doped polysilicon on the resultant structure, a gate pattern(33) interposed in a gate insulator(32) is formed on the active region and a dummy gate(34) formed at interface between the active and the field regions is simultaneously formed. A first spacer(35) and a second spacer(36) are formed at both sidewalls of the gate pattern(33) and the dummy gate(34). Then, source and drain regions(300) are formed in the semiconductor substrate(30) using the first and second spacers(35,36) as an implantation mask. A silicide layer(37) is formed on the exposed source and drain regions(300) and the exposed gates(33,34) to reduce electrical resistance.