| 摘要 |
PURPOSE: A method for crystallizing a silicon thin film and a method for manufacturing a thin film transistor are provided to prevent the silicon thin film from contaminating by removing the amorphous silicon thin film by a predetermined thickness. CONSTITUTION: An amorphous silicon thin film(31) is deposited on a semiconductor substrate(300). A metal thin film(32) which acts as a crystallization catalyst is formed on the amorphous silicon thin film(31). Then, a predetermined thickness of the amorphous silicon thin film(31) is removed by an etching process. Finally, the amorphous silicon thin film(31) is crystallized. The crystallization process is carried out by using a metal-silicide which is naturally created when the metal thin film(32) is deposited on the amorphous silicon thin film(31).
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