GAS INJECTION APPARATUS FOR THIN LAYER EVAPORATION OF SEMICONDUCTOR WAFER

摘要

PURPOSE: A gas injection apparatus for a thin layer evaporation of semiconductor wafer is provided in order to improve an uniformity of a thin layer thickness, according to spraying on a whole wafer substrate through a spray nozzle of a ring type which is located on a concentric circle, when evaporating in vacuum the thin layer on the silicon wafer as a semiconductor material by using a chemical gas-phase evaporation equipment of a low pressure by a type of sheet fed. CONSTITUTION: A gas injection apparatus for a thin layer evaporation of semiconductor wafer is formed by the following processes: a susceptor(11) which has a SiC heater as a heating element to heat and support a wafer substrate(W) at a center of a reaction room(10); a chemical gas-phase evaporation equipment of a low pressure by a type of sheet fed to be surrounded with a bel-jar(13) which is equipped by a outside heater(14), and the above outside heater(14) has a heating room in the outside of the above susceptor(11); a circular gas injection tube(20) with a large diameter which sprays on a whole wafer substrate from its edge a raw gas that is installed at a top space of the above wafer substrate(W), and that brings into the inside of the reaction room(10); a base gas injection tube(30) of a small ring type which is installed on a concentric circle of the above gas injection tube(20), and which injects and sprays the base gas on the center area of the wafer substrate(W); and many spray nozzles(21,31) which are installed to the rings forming the above injection tubes(20, 30) at a radial position.