| 摘要 |
PURPOSE: A sensor thin film transistor is provided to improve an operating characteristic of an image device by increasing a flow of photo current. CONSTITUTION: A sensor thin film transistor comprises a gate electrode(213) on a substrate(211), an insulating layer(215) on the gate electrode(213), a source electrode(217) and a drain electrode(219) on the gate electrode(213) spaced apart each other, ohmic contact layers(221a, 221b) on the source and drain electrodes(217, 219) which overlaps parallel with the electrodes(217, 219), a semiconductor layer(223) transforming incident light to photo current, and a protecting layer(225) on the semiconductor layer. An image device comprises a sensing part, a charging part charging the photo current of the sensing part and a switching part transmitting charge of the charging part outside. The sensing part comprises a gate electrode(213), a source electrode(217), a drain electrode(219), a semiconductor layer(223), and a protecting layer(125).
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