Selective silicidation process in non-volatile semiconductor memory devices

摘要

A selective silicidation process for electronic devices (1) integrated on a semiconductor substrate (2), said devices (1) comprising a plurality of active elements (3) formed with gate regions (4) which comprise at least one polysilicon layer (5), comprises the following steps: depositing a dielectric layer (6) over the entire surface of the semiconductor; removing said dielectric layer (6) to expose the polysilicon layer (5) of said gate regions (4); depositing a layer of a transition metal (7); subjecting the transition metal layer to a thermal treatment for selectively reacting it with the polysilicon layers and producing a silicide layer (8) over said gate regions (4). <IMAGE> <IMAGE>