| 摘要 |
PURPOSE: An RF(radio frequency) sputtering apparatus and a thin film formation method using thereof are provided to improve a quality of film by reducing bombardments and applying same RF power to a substrate and a target. CONSTITUTION: An RF sputtering apparatus(10) comprises a vacuum chamber(14), a target(18), a substrate(16) for loading a wafer, a gas supply unit(24), and an RF power supply unit(22). The apparatus further comprises a lower and an upper shields(21,20). The lower shield(21) adjacent to the substrate(16) is floated, and the upper shield(20) of the target(18) is grounded, thereby applying same RF power to the substrate(16) and the target(18). Thereby, the target(18) and the substrate(16) are generated self-bias voltage, respectively.
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