HEAVILY DOPED QUANTUM WIRE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A method for manufacturing a quantum wire is provided to obtain a quantum wire which has a better physical characteristics than a quantum well device. CONSTITUTION: A photosensitive layer is coated on an N-type semiconductor material, and then the photosensitive layer is patterned. The N-type semiconductor material is etched to form a V-shaped substrate. Then, the photosensitive pattern is removed. The V-shaped substrate is loaded on depositing equipment. A well layer that has a thickness, which is equal to the width of the upper surface of the V-shaped recess, is formed. A P-type semiconductor layer is formed on the above-mentioned structure.