| 摘要 |
PURPOSE: An electrostatic discharge protection transistor is provided to reduce a contact resistance of a gate and a source and thereby to improve a characteristic of the transistor, and to simplify a fabrication process of the transistor. CONSTITUTION: In a fabrication of an electrostatic discharge protection transistor, a highly doped drain(5) is partly formed in a substrate(1). Then, a gate oxide layer(2) and a polysilicon layer(3) are successively deposited on the substrate(1) to form a gate, partly overlapping the drain(5). Next, a lightly doped source(12) is formed beside and beneath the gate, and side walls(6) are formed on side surfaces of the gate. Subsequently, while a photoresist layer is formed above the drain(5), higher concentrations of dopant are implanted such that a part of the polysilicon layer(3) is changed to a conductive polysilicon layer(3') and a heavily doped source(4) is formed in the substrate(1). Next, a silicide layer(8) is respectively formed on the source(4), drain(5) and gate. An oxide layer(9) is then deposited forming contact holes to expose the silicide layer(8) on the source(4) and drain(5). Finally, a source electrode(10) and a drain electrode(11) are formed in the contact holes.
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