METHOD FOR FORMING STORAGE ELECTRODE OF MEMORY CAPACITOR

摘要

PURPOSE: A method for forming storage electrode of memory capacitor is provided to produce a memory capacitor with high capacitance. CONSTITUTION: A storage electrode contact plug(104) is created through layer insulation membrane(102) to contact electrically with a semiconductor substrate. A storage electrode layer(106) composed of polysilicon layer is evaporated on the layer insulation membrane(102) including the storage electrode contact plug(104). An embossing insulating layer is formed on the storage electrode layer(106). A photoresist pattern is made on the embossing insulating layer and the storage electrode layer are partially etched using the photoresist pattern as a mask. The embossing insulating layer is etched by spacer creating method for exposing small part of the storage electrode layer(106) after removing the photoresist pattern. A storage electrode(106a) is made by etching the upper side of the storage electrode layer(106) to use the embossing insulating layer as a mask. A storage electrode structure is completed by removing the rest of embossing insulating layer by wet etching method.