METHOD FOR PLUG FOR FORMING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming plug of semiconductor device is provided to guarantee uniformity and reproduction by simplifying process. CONSTITUTION: A field oxidation film(21) is defined activity part and field part. The oxidation film(21) is created on a silicon substrate(20). After forming a gate isolation film(22) using heat oxidation film, a doped polysilicon layer(23) is stocked for making a gate electrode. On the polysilicon layer(23), a nitride is fasten as an insulation film for capping and a gate line(23) is made by patterning after photo etching step. A low density of source/drain spreading field is constructed by ion injection using the gate line(23) on the activity field of the semiconductor substrate(20). A side spacer of gate(26) is built after sticking oxidation layer using CVD(Chemical Vapor Deposition) method on the substrate. On the front side of substrate, LDD(Light Doped Drain) type source drain is formed with low density of impurity spreading part by injecting of high density impurities. Using CVD method, a polysilicon layer doped impurities is stocked and a plug is created on the front of the substrate including the side spacer(25). The plug(271) is made of remained the polysilicon layer between the gate lines(23).