Circuit-integrated light-receiving device

摘要

A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate (1) of a first conductivity type; a first semiconductor crystal growth layer (30) of the first conductivity type provided on a surface of the semiconductor substrate, wherein the first semiconductor crystal growth layer includes a first portion (2) whose impurity concentration gradually decreases in a direction away from the surface of the semiconductor substrate (1) and a second portion (3) located in a first region above the first portion whose impurity concentration distribution is uniform in a depth direction; a buried diffusion layer (4) of the first conductivity type located in a second region which is above the first portion (2) of the first semiconductor crystal growth layer (30) and does not overlap the first region; a second semiconductor crystal growth layer (8) of a second conductivity type which is provided across a surface of the first semiconductor crystal growth layer (30) and a surface of the buried diffusion layer (4); and a separation diffusion region (7,9) having the first conductivity type for dividing the second semiconductor crystal growth layer into a light-receiving device section (80) and a signal processing circuit section (90). The first region is located in the light-receiving device section (80). In the signal processing circuit section (90), the buried diffusion layer (4) is in contact with the first portion (2) of the first semiconductor crystal growth layer (30). <IMAGE>