| 摘要 |
PURPOSE: A semiconductor laser diode of which an In memory effect is reduced by using a n inclined GaAs substrate is provided CONSTITUTION: A semiconductor laser diode includes a first conductive clad layer, an active layer, and a second conductive clad layer which are formed on a substrate of which a surface is inclined in a crystal direction. The inclined direction of the surface of the substrate£011|. The inclined angle of the surface of the substrate is 15°off. The substrate is a GaAs substrate. The active layer has a structure of InGaP/InGaAsP/InGaP quantum wall. A GaP layer is formed between InGaP and InGaAsP of the active layer. According to the semiconductor laser diode, by suppressing the In memory effect, the characterisic of the semiconductor laser diode is improved.
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