| 摘要 |
PURPOSE: A method for measuring a vacancy fault of a silicon wafer is provided to improve the productivity of articles by measuring the vacancy fault using a CU decoration technique. CONSTITUTION: A method for measuring a vacancy fault of a silicon wafer comprises a step of applying voltages of 8-10MV/cm. Under the voltages of 8-10MV/cm, a CU decoration technique is used to check the vacancy fault of the silicon wafer. At this tim, methanol is used as an electrolyte. At first, a silicon single crystalline is growing in a semiconductor substrate. Then, a mass of a multi crystalline silicon is inputted into a quartz furnace wit a dopant. The multi crystalline silicon and the dopant are melted in the temperature of 1425°C. Then, a wafer sample is prepared. by performing a final cleaning process. A device pattern is formed on the wafer sample so as to check the electrical feature of the wafer sample.
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