| 摘要 |
PURPOSE: A method of forming a gate electrode of semiconductor device is provided to prevent the formation of etching polymers while stopping diffusion of atoms between a titanium silicide layer and a polysilicon layer. CONSTITUTION: A method of forming gate electrode comprises the steps of: forming a gate insulation film on a semiconductor substrate(10) and then forming a doped silicon layer(12); forming a diffusion barrier layer(13) of atoms on the doped silicon layer; forming a titanium silicide layer(14) on the diffusion barrier layer of the atoms; depositing a mask oxide layer(15) on the titanium silicide layer; and patterning the mask oxide layer, the titanium silicide layer, the diffusion barrier layer and the doped silicon layer, and forming the gate electrode. The gate electrode does not generate a cohesive reaction between the titanium silicide and the doped polysilicon layer. Thereby, it is possible to reduce a diffusion of the atoms between the titanium silicide and the polysilicon layers, and to prevent the formation of the etching polymers.
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