METHOD FOR MANUFACTURING FLASH MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a flash memory device is provided to improve the operating feature of the flash memory device by omitting an oxide film forming process for preventing a substrate from being damaged. CONSTITUTION: A first insulation film and a second insulation film are sequentially formed on a semiconductor substrate(21). The first and second insulation films are patterned. A third insulation film side wall is formed at sides of the second and first insulation films. A source/drain impurity area(26) is formed at both sides of the third insulation side wall. Then, the second insulation film and the first insulation film are pattern in the matrix form. After forming a fourth insulation film, the fourth, second and first insulation films are selectively etched so as to expose a part of the semiconductor substrate(21). A gate oxide film(28) is formed on the exposed semiconductor substrate(21). A float gate oxide film(29a) is formed on the gate oxide film(28).