| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve properties of interconnection lines by making surface treatment for a substrate before forming the interconnection lines. CONSTITUTION: A method for fabricating a semiconductor device comprises placing a semiconductor substrate in a reactor, treating(S1) a surface of the semiconductor substrate with ozone, cleaning(S2) an oxide film which is formed at the surface treatment step with fluoride gas plasma, treating(S3) the surface of the semiconductor substrate with plasma, and forming(S4) an interconnection line by chemical vapor deposition process.
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